Si-SiO2 Interface Passivation Using Hydrogen and Deuterium Implantation
نویسندگان
چکیده
Hydrogen/deuterium was implanted in ^100& silicon to passivate dangling bonds at the Si/SiO2 interface when a thin oxide is grown on implanted silicon substrate. It was observed that implantation energy and dose influence the interface passivation. Measured interface states at the Si/SiO2 interface suggest an isotope effect where deuterium implanted devices yielded better interface passivation compared to that of hydrogen implanted devices. Diffusion of implanted hydrogen and deuterium to the interface is affected by the implantation damage. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1843752# All rights reserved.
منابع مشابه
Simulating Negative Bias Temperature Instability of p-MOSFETS
Introduction The degradation of MOSFET devices having relatively thin oxide layers is generally accepted as being mainly associated with the depassivation of silicon dangling bonds at the Si/SiO2 interface. These dangling bonds are initially passivated during the fabrication process by heating in hydrogen or, more rarely, a deuterium environment. The interface trap density is typically reduced ...
متن کاملShort Communication Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes
The metal/oxide/n-silicon tunneling diodes with hydrogen (deuterium) passivated Si/SiO2 interface are stressed under hole-injection conditions to investigate the mechanism of gate oxide degradation. Although the isotope effect on soft breakdown was previously observed in the deuterium-annealed metal/oxide/p-silicon devices, no isotope effect on the oxide soft breakdown was observed in the metal...
متن کاملInterface Hardening with Deuterium Implantation
Incorporation of deuterium to passivate silicon-dangling bonds at the Si-SiO2 interface through ion implantation before the growth of the gate oxide is the focus of this work. Polycrystalline silicon gate n-channel metal-oxide-semiconductor diodes with 4 nm gate oxide grown on deuterium-implanted p-type silicon ^100& substrate were investigated. Deuterium implanted at a light dose of 1 3 10/cm ...
متن کاملHydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si
Ultrathin SiO2 layers with a thickness of a few nanometers are proposed to act as functional elements in various high efficiency solar cell concepts: (i) A tunnel oxide layer integrated at the interface of a classical c-Si heterojunction with an a-Si:H emitter is proposed to reduce interface recombination due to excellent passivation properties [1]. Normally, these structures suffer from diffic...
متن کاملMetal-oxide-silicon diodes on deuterium-implanted silicon substrate
Ion implantation was used to incorporate deuterium at the Si–SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type ^100& silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1310/cm at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps...
متن کامل